Mar. 10 at 9:17 PM
$ALMU $AXTI aeluma's gallium arsenide (InGaAs) photodiode technology compete with Indium phosphide (InP) materials ?
Aeluma's InGaAs-on-silicon photodiode technology is poised to compete directly with traditional, substrate-based indium phosphide (InP) materials by offering similar performance with significantly higher scalability and lower costs. By integrating high-performance III-V materials directly onto 200mm/300mm silicon wafers, Aeluma overcomes the small wafer size limitations and high costs associated with conventional InP, enabling mass-market adoption for AI, lidar, and sensing applications.