Feb. 16 at 10:25 PM
$ALMU The key to the performance of Indium Gallium Arsenide (InGaAs) materials lies in their controllable bandgap, lattice-matched epitaxial growth, and high electron mobility, which allow them to excel in short-wave infrared (SWIR) imaging and high-speed electronics. By precisely tuning the ratio of indium to gallium, manufacturers can customize the material for specific sensitivity, such as the standard
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matched to Indium Phosphide (InP) for 900–1700 nm detection.